| 摘要 |
<p>A method for protecting a susceptor (1) so that the lifetime of it will be prolonged when SiC, a Group III-nitride or alloys thereof is epitaxially grown by Chemical Vapour Deposition on a substrate (6) arranged on a surface of the susceptor. The substrate and a gas mixture fed to the substrate for said growth are heated through heating of the susceptor. The invention is characterized by placing a plate (5) made of SiC, an alloy of SiC and the material grown or the material grown on suspector (1) and arranging the substrate (6) on said plate (5). By this method crystal layers may be grown on the substrate without any detrimental influence of impurities from the susceptor.</p> |
