| 发明名称 |
Halbleiter-Anordnung mit einem Kontaktfleck |
| 摘要 |
<p>A semiconductor device of a multilayer interconnection structure includes a plurality of insulating layers (7A,7B,7C) and a plurality of metal interconnection layers (11A,11B,11C). The uppermost metal interconnection layer is formed in a hall in the uppermost interlayer insulating layer. The uppermost interconnection layer is formed as a bonding pad portion and a part of the layer is formed into a ring-shaped portion (116) so as to cover the side portion of the hall. <IMAGE></p> |
| 申请公布号 |
DE69118331(T2) |
申请公布日期 |
1996.08.08 |
| 申请号 |
DE1991618331T |
申请日期 |
1991.11.21 |
| 申请人 |
NEC CORP., TOKIO/TOKYO, JP |
发明人 |
KANO, ISAO, MINATO-KU, TOKYO, JP |
| 分类号 |
H01L21/60;H01L21/3205;H01L23/485;H01L23/52;H01L23/538;(IPC1-7):H01L23/485 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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