| 摘要 |
<p>A thermal detector (B) includes a transducer layer (2) of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide (34) forms a gate insulator layer and increases capacitance of the transistor or latches of the transistor according to the polarization direction of the ferroelectric layer.</p> |
