| 摘要 |
<p>A serial memory (200) includes a memory cell array (226). Voltages for the memory cells are furnished by a voltage generator (228). Drivers (234) write data into latches (224) for programming the memory array. A high voltage supply (220) is used to program the memory array with the values stored in the latches, under control of a programming controller (240). The programming controller also controls the operation of circuits in the memory array, the column select, and the drivers to achieve programming of the memory array. During a debugging operation, the storage elements of the serial memory are loaded with various option bits by a test computer. Various parameters are set to nominal values by the option bits, and then are varied as necessary to achieve a desired level of performance. Once the desired level of performance is achieved, the new settings are fixed and the serial memory is suitable for normal use.</p> |
