| 摘要 |
<p>An electron beam apparatus comprises an electron- emitting device, an anode separated from the electron-emitting device by a distance H (m), means for applying a voltage Vf (V) to the device, and means for applying a voltage Va (V) to the anode. The device has an electron-emitting region arranged between a lower potential side electroconductive thin film which is connected to a lower potential side electrode and a higher potential side electroconductive thin film which is connected to a higher potential side electrode. The device also has a film containing a semiconductor substance with a thickness not greater than 10nm. The semiconductor-containing film extends on the higher potential side electroconductive thin film from the electron-emitting region toward the higher potential side electrode over a length L (m). The above Vf, Va, H and L satisfy the relationship L ≥ (1/ pi ) • (Vf/Va) • H. <IMAGE></p> |
