Method of manufacturing semiconductor layer

摘要

A method of manufacturing a semiconductor layer comprises preparing a first substrate (1) comprising a semiconductor; forming an etching stop layer (2) on the surface of the first substrate (1); forming an active layer (3) as a constituent of a semiconductor device on the etching stop layer (2); forming a crystal defect reducing layer (4) on the active layer (3); preparing a second substrate (5) comprising a material having a heat conductivity higher than the heat conductivity of the semiconductor of the first substrate (1); bonding the crystal defect reducing layer (4) to the surface of the second substrate (5); selectively etching away the first substrate (1) to expose the etching stop layer (2); selectively etching away the etching stop layer (2) to expose the active layer (3), thereby completing a semiconductor layer in which the active layer (3) is disposed on the second substrate (5) through the crystal defect reducing layer (4). Therefore, the heat dissipation property is significantly improved by the second substrate having a high heat conductivity and by reducing the thickness of the active layer. In addition, good crystallinity of the active layer and sufficient mechanical strength of the substrate are obtained. $$