| 摘要 |
Differences in thermal expansion properties between integrated circuit chips, especially of gallium arsenide, and the dielectric substrates (especially diamond and aluminum nitride) on which said chips are mounted are accommodating by interposing between the substrate and the chip a mixed metal layer comprising at least one ductile, thermally conductive metal such as copper and at least one other metal, preferably a refractory metal, having a lower coefficient of thermal expansion, preferably tungsten. A compliant metal layer, typically of aluminum, silver, copper or gold, is preferably interposed between the substrate and the mixed metal layer. |
