| 摘要 |
<p>A power semiconductor device wherein at least one stratified structure (3) - having a body of semiconducting material (6) forming at least one electronic component, and flat electric interconnecting and contact elements (8a, 8b; 9a, 9b) - is housed in a tubular body (4) made of plastic material and closed at opposite ends by respective substantially flat metal sealing walls (19, 20). Each metal sealing wall (19, 20) is annular, and has a peripheral edge (19a, 20a) glued (22) to a respective end portion (15, 16) of the tubular body. <IMAGE></p> |
