发明名称 |
Method of manufacturing semiconductor device having capacitor |
摘要 |
<p>A platinum bottom electrode film, a dielectric film composed of a high permittivity dielectric material or a ferroelectric material, and a platinum top electrode film are formed on a substrate on which circuit elements and wiring are formed, and the platinum top electrode film and the dielectric film are selectively dry-etched by using etching gas containing chlorine, then plasma generated by discharging gas containing fluorine is irradiated. By this method of manufacturing a semiconductor device including a capacitor, there is almost no residual chlorine, and hence erosion of the dielectric film by residual chlorine is prevented.</p> |
申请公布号 |
EP0725430(A2) |
申请公布日期 |
1996.08.07 |
申请号 |
EP19960101154 |
申请日期 |
1996.01.27 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
NAGANO, YOSHIHISA;FUJII, EIJI |
分类号 |
H01L21/302;H01L21/02;H01L21/3065;H01L21/3213;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/105;H01L27/108;(IPC1-7):H01L21/320;H01L21/321 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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