| 摘要 |
<p>The invention is directed to a method for forming an insulating film of an electronic device comprising a step for forming a metal electrode, a step for forming a fluoride layer on the surface of said metal layer by bringing a gas containing fluorine or containing molecules containing fluorine into contact with the surface of said metal layer, a step for heating the fluoride layer at a temperature of 100-400 DEG C in an atmosphere of an inert gas. <IMAGE></p> |
