METHOD TO FORM CONTACT IN SEMICONDUCTOR APPARATUS

摘要

PURPOSE: A method for forming contacts is provided to increase thickness of an insulation film between layers so that an operation speed is improved in a semiconductor apparatus. CONSTITUTION: Disclosed is a method for forming contacts in a semiconductor apparatus. According to the method, a lower metal layer is formed on a semiconductor substrate where an insulation layer(102) has been formed. A capping layer(108) is formed on the lower metal layer(104). A layer insulation film(110) is formed on the capping layer(108). A hard mask layer(112) is formed on the layer insulation film(110). A photoresist mask layer(114) is formed on the hard mask layer(112) for contact opening. The hard mask layer(112) is etched according to the photoresist mask layer(114). The layer insulation film(110) and capping layer(108) are etched according to the etched hard mask layer(112), so that a contact is formed.