| 摘要 |
PURPOSE: The method is to modulate efficiently etching rate by oxidizing and etching more simply and economically a copper thin film used when metal interconnecting of semiconductor device is made. CONSTITUTION: This etching method comprises a step of oxidizing copper thin film for etching and a step of reacting the etched copper with etching reactive gas to remove the oxidized metal. To this end, it uses oxygen radical having strong oxidizing force to oxidize the copper. In the etching method, the copper thin film is oxidized by use of O3, O2 or ozone plasma. Then, beta-diketone family etching reactive gas is introduced to and reacted with the oxidized copper to make the copper thin film oxide and simultaneously react with etching reactive gas. Thus, etching rate can be effectively adjusted under the temperature lower than in the prior art by using small amount of oxidizing agent and etching reactive gas.
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