| 摘要 |
PURPOSE: To obtain the bonding wire which has enough bonding strength between a bonding wire connected to first bonding and electrode on a semiconductor element, in which defect due to contact between bonding wires in resin- enclosing the semiconductor element is hard to occur and which is suitable for narrow pitch of lead frame, narrow pad pitch of electrodes on semiconductor element, long loop wiring between lead frame and electrode on semiconductor. CONSTITUTION: This bonding wire contains 0.1-2wt.% Cu and 0.01-0.1wt.% Pd in high pure gold, having purity 99.99wt.%, or additionally contains, 0.0001-0.01wt.% Sn, and/or 0.0001-0.01wt.% one or more kinds among Ca, Be, Ge, rare earth metals, Sr, Ba, In and Ti. |
