发明名称 |
Contoured-tub fermi-threshold field effect transistor and method of forming same |
摘要 |
A Fermi-threshold field effect transistor includes a contoured-tub region of the same conductivity type as the source, drain and channel regions and having nonuniform tub depth. The contoured-tub is preferably deeper under the source and/or drain regions than under the channel region. Thus, the tub-substrate junction is deeper under the source and/or drain regions than under the channel region. The diffusion capacitance is thereby reduced compared to a tub having a uniform tub depth, so that a high saturation current is produced at low voltages. The contoured-tub may be formed by an additional implant into the substrate using the gate as a mask.
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申请公布号 |
US5543654(A) |
申请公布日期 |
1996.08.06 |
申请号 |
US19940351643 |
申请日期 |
1994.12.07 |
申请人 |
THUNDERBIRD TECHNOLOGIES, INC. |
发明人 |
DENNEN, MICHAEL W. |
分类号 |
H01L21/265;H01L21/336;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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