发明名称 |
Process for forming titanium silicide local interconnect |
摘要 |
A process for forming a titanium silicide local interconnect between electrodes separated by a dielectric insulator on an integrated circuit. A first layer of titanium is formed on the insulator, and a layer of silicon is formed on the titanium. The silicon layer is masked and etched to form a silicon strip connecting the electrodes, and an overlying second layer of titanium is formed over the silicon strip. The titanium and silicon are heated to form nonsilicidized titanium over a strip of titanium silicide, and the nonsilicidized titanium is removed.
|
申请公布号 |
US5543361(A) |
申请公布日期 |
1996.08.06 |
申请号 |
US19940351843 |
申请日期 |
1994.12.08 |
申请人 |
AT&T GLOBAL INFORMATION SOLUTIONS COMPANY;HYUNDAI ELECTRONICS AMERICA;SYMBIOS LOGIC INC. |
发明人 |
LEE, STEVEN S.;FUCHS, KENNETH P.;MILLER, GAYLE W. |
分类号 |
H01L21/3205;H01L21/28;H01L21/336;H01L21/768;H01L23/52;H01L29/78;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|