| 摘要 |
A flip-flop circuit which makes use of a resonant-tunneling effect is improved in that it is simplified in structure and hence in designing of a component and operates at a room temperature. The flip-flop circuit includes a bipolar transistor and a resonant-tunneling diode. The collector terminal of the bipolar transistor is connected to a voltage source, and the base terminal is connected to an input terminal of the flip-flop circuit by way of a resistor. One of a pair of terminals of the resonant-tunneling diode is grounded while the other terminal is connected to the emitter terminal of the bipolar transistor with a junction therebetween connected to an output terminal of the flip-flop circuit. The bipolar transistor is set such that, when the value of a current flowing into the base terminal has a high level, the value of a current flowing through the collector terminal is higher than a peak current value of the resonant-tunneling diode, but when the value of the current flowing into the base terminal has a low level, the value of the current flowing through the collector terminal is lower than a valley current value of the resonant-tunneling diode.
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