Electrostatic discharge protection circuit employing a mosfet device

摘要

An electrostatic discharge protection device for protecting the input of a circuit comprises a p-channel MOSFET (P-FET). The n-well with P+ implants of the P-FET provides a functional lateral PNP bipolar transistor that is coupled between the input of the circuit and a supply node of the circuit. Biasing circuitry controls biasing of the gate and n-well body of the P-FET in accordance with the voltage at the input of the circuit.