Semiconductor member and semiconductor device having a substrate with a hydrogenated surface

摘要

A semiconductor member with a monocrystalline semiconductor layer for forming a functional element. The main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH4OH:H2O2:H2O of 1:1:5 by volume at a washing temperature of 85 DEG C. for a washing time of 10 minutes.