发明名称 HEATING APPARATUS FOR MANUFATURING PROCESS OF SEMICONDUCTOR
摘要 PURPOSE: A heating apparatus is provided to reduce the time to raise the temperature of a chamber and to achieve high thermal efficiency on the manufacturing process of a semiconductor. CONSTITUTION: A power supply unit(14) applies an AC current to a coil(12) which locates at a wall of the chamber. With passing time, a magnetic filed rises around the coil(12) and induces an inductive current(34). The inductive current is a vortex current(34) which flows in a skin depth of the wal(32)l of the chamber determined by a conductivity of the wall(32) of the chamber and a frequency of the AC current flowing the coil. When the vortex current(34) is induced on the wall(32) of the chamber. heat is generated by the vortex current(34) and internal resistance.
申请公布号 KR20010008844(A) 申请公布日期 2001.02.05
申请号 KR19990026874 申请日期 1999.07.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JI, GYEONG GU
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址
您可能感兴趣的专利