发明名称 |
HEATING APPARATUS FOR MANUFATURING PROCESS OF SEMICONDUCTOR |
摘要 |
PURPOSE: A heating apparatus is provided to reduce the time to raise the temperature of a chamber and to achieve high thermal efficiency on the manufacturing process of a semiconductor. CONSTITUTION: A power supply unit(14) applies an AC current to a coil(12) which locates at a wall of the chamber. With passing time, a magnetic filed rises around the coil(12) and induces an inductive current(34). The inductive current is a vortex current(34) which flows in a skin depth of the wal(32)l of the chamber determined by a conductivity of the wall(32) of the chamber and a frequency of the AC current flowing the coil. When the vortex current(34) is induced on the wall(32) of the chamber. heat is generated by the vortex current(34) and internal resistance.
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申请公布号 |
KR20010008844(A) |
申请公布日期 |
2001.02.05 |
申请号 |
KR19990026874 |
申请日期 |
1999.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JI, GYEONG GU |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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