Halbleiteranordnung mit einer Mehrschichten-Gateelektrode und Verfahren zu ihrer Herstellung,申请号DE1990627566-传众专利搜索

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发明名称	Halbleiteranordnung mit einer Mehrschichten-Gateelektrode und Verfahren zu ihrer Herstellung
摘要
申请公布号	DE69027566(D1)	申请公布日期	1996.08.01
申请号	DE1990627566	申请日期	1990.09.06
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP	发明人	MARAKAMI, KOUJI, C/O INTELLECTUAL PROPERTY DIV., TOKYO 105, JP;MATSUNAGA, TAIRA, C/O INTELLECTUAL PROPERTY DIV., TOKYO 105, JP
分类号	H01L21/768;H01L21/28;H01L23/522;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/41	主分类号	H01L21/768
代理机构		代理人
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