METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is to prevent thermal diffusion of atoms between a Ta2O5 layer and an upper electrode, improving capacitance and reliability of a capacitor. CONSTITUTION: A high dielectric Ta2O5 layer(34) is deposited on a bottom electrode(30) and the surface of the dielectric layer is nitrified. A tantalum nitride layer is formed as the first upper electrode(36) on the surface in NH3 atmosphere. Therefore, the tantalum nitride layer(36) between the second upper electrode(38) and the dielectric layer(34) can play a part as a diffused interface that is stable thermodynamically over 900 deg.C.