Microwave integrated circuit capacitor on gallium arsenide substrate

摘要

A silicon oxide SiO2 film (12) is formed on a GaAs substrate (11). Above this is the first conduction film (13) on which the capacitor (10) is built. The capacitor has an under-electrode (14) with a multilayer structure of Ti (5 nm), Mo (50 nm), Pt (400 nm). The dielectric film (15a) is formed of SrTiO3 (STO), or a similar substance with a high dielectric properties, e.g. BaxSr1-xTiO3 (BSTO), Ta2O5, PbZrxTi1-xO3 or PbxLa1-xZryTi1-yO3. The multilayer over-electrode (16a) is formed of WNx (20 nm) (21), W (300 nm). The method of construction and eighteen variations of configuration are given.