发明名称 |
Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration |
摘要 |
A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.
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申请公布号 |
US2001001484(A1) |
申请公布日期 |
2001.05.24 |
申请号 |
US20000732989 |
申请日期 |
2000.12.08 |
申请人 |
FRIEDRICHS PETER;PETERS DETHARD;SCHORNER REINHOLD |
发明人 |
FRIEDRICHS PETER;PETERS DETHARD;SCHORNER REINHOLD |
分类号 |
H01L21/04;H01L29/45;(IPC1-7):H01L21/28;H01L21/320;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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