发明名称 |
Method for the preparation of wire-formed silicon crystal |
摘要 |
<p>Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.</p> |
申请公布号 |
EP0724028(A2) |
申请公布日期 |
1996.07.31 |
申请号 |
EP19950402952 |
申请日期 |
1995.12.27 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
FUKUDA, TSUGUO;KAMIOKA, TADASHI;SAKAGUCHI, SUSUMU;YAMADA, TORU;KIRASAWA, TERUHIKO |
分类号 |
C30B13/00;C30B15/00;(IPC1-7):C30B15/00;C30B29/06 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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