发明名称 DISK-EDGE TYPE FIELD EMISSION DEVICE AND METHOD
摘要 a silicon substrate doped with a high concentration of impurity; a disk-edge type emitter electrode integrally formed with the substrate and having a round circumference; an emitter having silicide interposed in the boundary with the emitter electrode; an insulating layer formed on the substrate; and a gate electrode formed on the open insulating layer in the vicinity of the emitter electrode and the insulating layer.
申请公布号 KR960010426(B1) 申请公布日期 1996.07.31
申请号 KR19930000081 申请日期 1993.01.06
申请人 SAMSUNG DISPLAY DEVICES CO., LTD. 发明人 LEE, KANG - OK;LEE, CHUN - KYU
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
代理机构 代理人
主权项
地址