发明名称 |
DISK-EDGE TYPE FIELD EMISSION DEVICE AND METHOD |
摘要 |
a silicon substrate doped with a high concentration of impurity; a disk-edge type emitter electrode integrally formed with the substrate and having a round circumference; an emitter having silicide interposed in the boundary with the emitter electrode; an insulating layer formed on the substrate; and a gate electrode formed on the open insulating layer in the vicinity of the emitter electrode and the insulating layer.
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申请公布号 |
KR960010426(B1) |
申请公布日期 |
1996.07.31 |
申请号 |
KR19930000081 |
申请日期 |
1993.01.06 |
申请人 |
SAMSUNG DISPLAY DEVICES CO., LTD. |
发明人 |
LEE, KANG - OK;LEE, CHUN - KYU |
分类号 |
H01J1/30;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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