| 摘要 |
In an artificial superlattice magnetoresistance effect element 1 in which two or more of magnetic thin film layers Mn having different coercive forces are stacked with intervening of a non-magnetic film layer Nn-1 and resistance changes depending on directions of magnetization in adjacent magnetic thin film layers by utilizing differences in the coercive forces, the element is characterized in that an anisotropy magnetic field Hk is increased by reducing a thickness of a soft magnetic layer, anisotropy in the magnetic thin film layer is obtained by forming the magnetic thin film layer in a magnetic field to thus increase the Hk, a material having large Hk is used as a soft magnetic material for the soft magnetic layer, and further the anisotropy is obtained by reducing a pattern width into 1-30 mu m to thus increase the Hk. The element exhibits the resistance change in the neighborhood of a zero magnetic field and requires no bias mechanism. <IMAGE> |
