Manufacturing method for semiconductor devices controlled by field effect

摘要

The field effect semiconductor mfr. has the base zones of a MOSFET or an insulated-gate bipolar transistor formed in the surface of a layer (2) of given doping type by implantation of the opposite doping type, with subsequent application of an epitaxial layer (4) with the same doping type as the first layer. The doping material diffuses to the surface of the second layer to form the base zones, which have a lateral area (3') of higher conductivity beneath the surface, allowing the minority charge carriers to flow to the source electrode (11) with a reduced voltage drop.