发明名称 |
Sputter deposition of hydrogenated amorphous carbon film |
摘要 |
The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365 and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks. <IMAGE> |
申请公布号 |
EP0724022(A1) |
申请公布日期 |
1996.07.31 |
申请号 |
EP19960100260 |
申请日期 |
1996.01.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PURUSHOTHAMAN, SAMPATH;BABICH, EDWARD D.;CALLEGARI, ALLESSANDRO C.;DOANY, FUAD E. |
分类号 |
C23C14/06;C23C14/34;G02B1/10;G03F1/00;G03F1/26;G03F1/32;G03F1/34;H01L21/205 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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