| 摘要 |
The solid state diode has an n-type substrate (4) formed between a pair of main surfaces (2,3). Within the one surface (2) of the substrate is formed an n+ type semiconductor cathode emitter (8) and in the other surface is a p-type region (9) acting as an anode emitter. The cathode (7) and anode (6) electrodes are coupled to covering metal layers (5). Separate anode emitter regions (9) have a connection to the electrodes and n+ type short circuit areas (10) are provided in two regions. Control electrodes (11) are inset into the substrate and are embedded in insulating regions (15), of for example, Si02 material. The control electrodes can be of such as polysilicon material. |
