Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50{20 {0 C

摘要

Thermally sensitive silicon thyristors capable of intrinsically switching between high and low resistance states in response to a predetermined temperature in the range -30 DEG C to +150 DEG C; this intrinsic switching temperature being not only lower than heretofore achieved but also predictably determinable. The two terminal breakover voltage is nominally equal to one-half Vmax at a temperature less than 50 DEG C, where Vmax is the maximum value of the two terminal breakover voltage of the thyristor with respect to temperature.