| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a single-pole double-throw switch circuit in which a loss increase is suppressed in a high frequency signal that passes through between the drain and the source of a switch element without bringing about an increase in a consumption current and a characteristic is improved. SOLUTION: This semiconductor switch integrated circuit to be a high frequency switch element by complimentarily interrupting the drains and the sources of depression mode field effect transistors Q1 and Q2, is provided with an enhancement mode field effect transistor Q3 where a single phase switch signal is inputted to its gate and an inverted signal by a drain output is inputted to the gate of the Q1, an enhancement mode field effect transistor Q4 where an inverted signal with respect to the single phase switch signal is inputted to its gate and a non inverted signal by a drain output is inputted to the gate of the Q2, and an enhancement mode field effect transistor Q5 where the single phase switch signal is inputted to its drain and an inverted signal with respect to the single phase switch signal by a drain output is inputted to the gate of the 4th transistor.</p> |
