发明名称 MANUFACTURE OF MULTI-LAYER WIRING STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 PURPOSE: To provide a polyimide resin precursor of a specific composition with sufficient photosensitivity by adding acrylic acid and/or methacrylic acid to it and to flatten differences in the levels of wiring through interlayer isolation. CONSTITUTION: In the presence of solvent, 1.6 to 2 mols of monohydric alcohol with the number of carbon under 4 is added to 1mol of aromatic tetrabasic acid dianhydride and heated on a patterned substrate. Diester is used for all or part of the tetrabasic acid dianhydride, a photosensitive polymer composition, including a polyimide resin precursor 100 by weight and acrylic acid and/or methacrylic acid 1 to 400 by weight obtained by allowing 0.2 to 1mol of an amine compound and 0 to 0.8mol of a diamine compound, which are expressed by a formula (in the formula R<1> is an aromatic cyclic group, R<2> is a hydrocarbon group with the number of hydrogen or carbon under 3, and one R<2> may be different from another) to react with each other in the total quantity of 1mol of the amin compound and the diamine compound, is coated, dried, exposure-developed, and hardened. And an interlayer insulating film 51 and an upper wiring layer 7 are formed. This enables photosensitivity to be retained and differences in wiring levels to be eliminated.
申请公布号 JPH08195565(A) 申请公布日期 1996.07.30
申请号 JP19950004537 申请日期 1995.01.17
申请人 HITACHI CHEM CO LTD 发明人 UEDA ATSUSHI
分类号 G03F7/027;G03F7/038;H01L21/3205;H01L21/768;H05K3/46;(IPC1-7):H05K3/46;H01L21/320 主分类号 G03F7/027
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