| 摘要 |
A semiconductor laser including a semiconductor substrate of a first conductivity type; a semiconductor multilayer structure disposed on the substrate and including a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type, opposite the first conductivity type, and a current blocking layer of the first conductivity type; a laser light emitting facet; a stripe-shaped V groove extending in a resonator length direction transverse to the laser light emitting facet and penetrating in a depth direction into a part of the semiconductor multilayer structure, including into the second cladding layer, the stripe-shaped V groove having a width transverse to the resonator length direction and the depth direction wherein at least one of the depth and width of the stripe-shaped V groove has a first dimension adjacent the laser light emitting facet and a second dimension, different from the first dimension, within the semiconductor laser spaced from the laser light emitting facet; and a semiconductor layer of the second conductivity type disposed in and filling the stripe-shaped V groove.
|
