发明名称 DOPED ZONES MAKING PROCESS ON SEMICONDUCTOR COMPONENTS AND SOLAR CELL WHICH IS OBTAINED WITH THE HELP OF THIS PROCESS
摘要 A bifacial solar cell including a semiconductor substrate wafer, a first active area of a first conductivity type provided on at least a part of a first side of the wafer and a second active area of a second conductivity type provided on a second side of the wafter, the edge face of the wafter and the periphery of said first side of the wafter. The first active area and second active area are separated by a distance lambda , the distance lambda allowing a leakage current to flow between the first and second active areas.
申请公布号 RO111230(B1) 申请公布日期 1996.07.30
申请号 RO19920001476 申请日期 1991.05.29
申请人 SAFIR YAKOV, RINGSTED 发明人 SAFIR YAKOV
分类号 H01L31/04;H01L;H01L21/225;H01L31/0216;H01L31/068;H01L31/18;H01L31/20 主分类号 H01L31/04
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