| 摘要 |
PURPOSE: To improve the reliability of IC chips by efficiently expelling IC chips which are not normal in the outer peripheral parts of a silicon wafer without entailing an increase in equipment investment, wafer unit price and delivery time in a pattern forming stage by photolithography of semiconductor devices. CONSTITUTION: A light transmissive film 9 with a circular frame for the purpose of preventing the sticking of foreign matter to a glass mask 7 is used at the time of forming resist patterns of a one-to-one projection size by a photolithography technique on the wafer 1. The semiconductor devices are produced by using the light transmissive film 9 having the inside diameter of this circular frame (pellicle frame) 8 smaller than the diameter of the silicon wafer. The pellicle frame 8 is formed not to a simple circular shape but to a shape having ruggedness or is formed in such a manner that the shade of the pellicle film is projected on the outer periphery of the silicon wafer 1. Then, the rugged shape is formed to comply with the arcing shape of the pawls of the apparatus for production onto the wafer, by which the compatibility of the assurance of the number of the chip layouts on the wafer with the expulsion of the imperfect chips is attained and optimized. |
