| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for connecting an upper conductor with a lower conductor while sustaining insulation with respect to an intermediate conductor arranged through a limited interval. SOLUTION: A large number of gate insulation films 2A and word lines 2 being used for the gate electrode are formed on a semiconductor substrate 1 while being separated by a predetermined distance. A first insulation film 3 is then formed entirely thereon and flattened before second and third insulation films are deposited. A first contact mask is formed on the third insulation film for making a contact hole and the unmasked parts of the second and third insulation films are subjected to anisotropic etching thus forming respective patterns. Subsequently, only the second insulation film is etched selectively to form a narrow second insulation film pattern. After removing the first mask, annular Si pads 7' are formed on the side wall of the opposite insulation film patterns and then a fourth insulation film 8 is deposited entirely thereon. After etching the unmasked part on the film except the contact, the second and third insulation film patterns are removed and then the first insulation film is etched using the pad as a barrier film thus making a fine contact hole 20. |
