发明名称 METHOD FOR SUPPLY OF VOLTAGE TO MEMORY ARRAY AND TO CONTROL LINE AT INSIDE OF MEMORY ARRAY AND THRESHOLD CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To obtain a method for making it possible to prevent high transient current by incorporating the functions of controlling rasing and lowering voltages on a control line to supply a common control voltage to a plurality of charge storage transistors and first and second switch circuits. SOLUTION: Since the gate of a third field effect transistor 360 is normally biased to a high potential, it becomes a low resistance. A load connecting point 300 is connected to a reference potential 390 via a fourth field effect transistor 370 in the state at the time of first moment. After the first moment, when the gate potentials of fourth and fifth transistors are set to the ground potential, it is turned off. Thus, the application of the lowering current to the point 300 is completed. A load voltage response control circuit monitors the voltage at the point 300, and the transistor 370 is held off until it is lowered to the predetermined level. The transistor is switched so as to apply ON potential by the operation of the control circuit, and the point 300 becomes the ground potential.</p>
申请公布号 JPH08195096(A) 申请公布日期 1996.07.30
申请号 JP19950218902 申请日期 1995.08.28
申请人 S G S THOMSON MICROELECTRON LTD 发明人 KORIN HOITSUTOFUIIRUDO
分类号 G11C17/00;G11C16/06;G11C16/16;H01L27/10;(IPC1-7):G11C16/06 主分类号 G11C17/00
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