| 摘要 |
PURPOSE: To provide a high dielectric film capacitor, which uses a thin film having a perovskite crystal structure as a dielectric film, can suppress the reduction in dielectric constant caused by the film thinning and can increase the capacitance of the capacitor. CONSTITUTION: In a high dielectric film capacitor, which is constituted of a capacitor electrode and a capacitor dielectric film comprising the thin film of normal dielectric perovskite crystal, a Pt film 502 as the first capacitor electrode is epitaxially grown in the orientation of (001) on a (001)-oriented MgO substrate 501. A KTaO3 film 503 as a capacitor dielectric film is formed on the film 502. A Pt film 504 as the second capacitor electrode is formed on the film 503. Thus the capacitor is constituted. Furthermore, a transistor part is stuck to the capacitor part, and the DRAM cell is constituted. |
