| 摘要 |
PURPOSE: To provide an aperture which is free from warpage when it is irradiated with an electron beam, high in accuracy, and long in useful life by a method wherein a patterned part is provided at the thicknesswise center of the aperture in an aperture manufacturing process, where the aperture is used for drawing a pattern with an electron beam. CONSTITUTION: The front side of a silicon wafer 1 is etched, then the rear side is etched nearly as deep as the front side, a required pattern is formed on an intermediate layer, and a conductive layer is formed on the front side. |
