| 摘要 |
PURPOSE: To realize a process for producing an exposure mask for photolithography which is defect-free and inexpensive. CONSTITUTION: The pattern data processed by a CAD releases a film reticle 1 by a laser photoplotter with a raster converter and this reticle is reversed on an emulsion dry plate, by which an emulsion reticle 4 is formed in production of the exposure mask for fine working photolithography using a photoresist. Excessive exposure is executed by this reversal. This emulsion reticle 4 as a reticle is subjected to positive reduction stepping to a chromium blank by a photorepeater. The chromium is etched after developing, by which the exposure mask is obtd. The exposure mask is overetched by this etching of the chromium. |
