MONOCRYSTALLALINE MATERIAL LAYER ON A COMPLIANT SUBSTRATE

摘要

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer (26). The monocrystalline material layer is epitaxially grown over at least a portion ofthe accommodating buffer layer via lateral epitaxial overgrowth.