| 摘要 |
PURPOSE: To manufacture, with high reliability and at high yield, a semiconductor memory device, in which a sufficiently large storage mode capacity used to enhance a soft-error resistant property has been formed, in such a way that the number of manufacturing processes is not increased. CONSTITUTION: A semiconductor memory device is constituted in such a way that a conductive layer 22 which constitutes a load element for an SRAM formed on a semiconductor substrate 21 is formed on a ground wiring layer 24 via an insulating layer 23 so as to include the edge 24a of the ground wiring layer 24 and that a storage node capacity for a memory cell is formed between the conductive layer 22 constituting the load element and the ground wiring layer 24. |
