| 摘要 |
<p>PURPOSE: To rapidly obtain a high voltage at an output side in a high voltage switching circuit used for a semiconductor integrated circuit. CONSTITUTION: A field effect transistor T1 is used as the switching element of the high voltage switching circuit, and a capacitor C1 capable of being charged to a voltage slightly lower than a required gate voltage required for perfectly turning on it is provided. At the time of switching on, the capacitor voltage is applied to the gate of the field effect transistor T1 while superimposing on a source voltage VCC, and the gate voltage is made the required gate voltage or above. Thus, the field effect transistor T1 is turned on perfectly instantly.</p> |
