| 摘要 |
PURPOSE: To provide a semiconductor memory capable of setting a mode after resin mold and reducing an area occupied by bonding pads in a chip area. CONSTITUTION: When the mode is set, when a test mode signal is received from a control means 6, a mode switch signal generation means 7 generates various timing signals in the inside, and takes in the data inputted to the bonding pad DQ4 based on these timing signals, and ferroelectric capacitance elements C1 , C2 store positive or negative polarization charges different from each other, and the setting of the mode setting data is ended. When power source is applied, and a POR signal is outputted from the control means 6 for using the semiconductor storage, the mode switch signal generation means 7 generates various timing signals in the inside, and it reads out the storage contents of the ferroelectric capacitance elements C1 , C2 storing the positive or negative polarization charges to output a MODE signal to a selector means 5 until power source is interrupted. The selector means 5 transfers the data between an input/output line I/O and the bonding pad DQ in the mode based on the MODE signal. |
