发明名称 MASK FOR X-RAY PATTERN DELINEATION
摘要 <p>Fabrication of reflective masks, designed for use with x-ray delineating radiation in the construction of sub-micron devices, is expedited by use of a barrier layer intermediate the multilayer reflector and the absorber layer. The barrier is designed to reduce damage to the multilayer reflector during two stages of fabrication during initial patterning and during subtractive or additive mask repair. Composition of the barrier is so chosen as to minimize such damage during its removal in baring of the reflector, and also as to have requisite stability in regions retained during mask life.</p>
申请公布号 CA2090157(C) 申请公布日期 1996.07.30
申请号 CA19932090157 申请日期 1993.02.23
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY 发明人 TENNANT, DONALD MILAN
分类号 G03F1/16;G03F1/14;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F1/16
代理机构 代理人
主权项
地址