LASER DIODE MANUFACTURING METHOD

摘要

The laser diode of plasma buried heterodyne st. is prepared by laminating orderly an n-InP epitaxial layer(2), an n-InGaP wave guide layer(3), an active layer of undoped InGaP(4), and a p-InP epitaxial layer(5) on the n+-InP substrate(1); forming a mask layer(20) on the laminated layer and then inverse mesa pattern(30) by etching selectively some laminated layers by 4-step wall etching process growing orderly an p-InP epitaxial layer(8) and an n--InP layer(7) on the side wall of inverse mesa pattern; and growing an p-InP epitaxial layer(8) and an n-InGaP epitaxial layer(9) on top of the whole structure.