| 摘要 |
A micro-bolometric infrared (IR) staring array (10) is described. The active element (12, 14, 16, 18) in each pixel within a two-dimensional array (10) is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode (12, 14, 16, 18). Each diode (12, 14, 16, 18) in the array (10) serves as both an IR energy detecting element and a switching element. Each diode (12 14, 16, 18) in a given row (20a, 20b) of the IR pixel array(10) to be sensed, or read, is driven at a constant voltage, rendering its IR response highly controllable in the forward biased operating curve of the diodes (12, 14, 16, 18) in the addressed row (20a, 20b). Diodes (12 14, 16, 18) not being driven are, due to their reverse bias, in their off state producing minute leakage current and thus make no significant contribution to the sensed current representing a given pixel's IR exposure. The row-addressed driven or active diodes (12, 14, 16, 18) are sensed column by column (22a, 22b) by sample and hold techniques to produce a two-dimensional IR pixel image of a target. This simplifies the geometries as well as the cell stuctures while increasing the fill ratio to greater than approximately fifty percent.
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