TUNGSTEN PLUG FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method is provided to improve the quality of the device with reliability and reduction of resistance by preventing key hall, and comprises the steps of: forming a contacting window by etching an interface insulating layer (2) selectively; forming a junction layer (3) to increase the combining force between the interface insulating layer (2) and a tungsten film (4); forming a first tungsten film (4) on the junction layer (3); etching an over hang generated by the tungsten film; forming a second tungsten film (6) on the first tungsten film; forming a plug in the contacting window by etch back of the first, the second tungsten film and the junction layer.