| 发明名称 |
FORMING METHOD OF GATE-OXIDE-FILM |
| 摘要 |
The gate oxide film is prepared by depositing a 1st oxide film using SiH2Cl2 and N2O gas at 800-900deg.C, incorporating Cl into the interface between wafer and oxide film, depositing a 2nd oxide film on the 1st oxide film using SiH4 and N2O gas, and heatingm the 1st and 2nd oxide films.
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| 申请公布号 |
KR960009979(B1) |
申请公布日期 |
1996.07.25 |
| 申请号 |
KR19930008077 |
申请日期 |
1993.05.11 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
LEE, SUK - HEE |
| 分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 地址 |
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