STATIC RANDOM ACCESS MEMORY HAVING STRUCTURE OF FIRST-, SECOND-AND THIRD-LEVEL CONDUCTIVE FILMS,申请号KR19860011170-传众专利搜索

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发明名称	STATIC RANDOM ACCESS MEMORY HAVING STRUCTURE OF FIRST-, SECOND-AND THIRD-LEVEL CONDUCTIVE FILMS
摘要
申请公布号	KR960010004(B1)	申请公布日期	1996.07.25
申请号	KR19860011170	申请日期	1986.12.24
申请人	HITACHI MANUFACTORY K.K.	发明人	YAMANAKA, TOSHIAKI;SAKAI, YOSHIO;IIJIMA, SHINPEI;MINATO, OSAMU;HONJYO, SHIGERU
分类号	H01L27/11;G11C11/41;H01L21/8244;H01L27/10;H01L27/102;(IPC1-7):H01L27/11	主分类号	H01L27/11
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